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| HF10-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF10-12F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45 A FEATURES: * PG = 20 dB min. at 10 W/30 MHz * IMD3 = -30 dBc max. at 10 W(PEP) * OmnigoldTM Metalization System F E B C D E C E O.125 NOM. FULL R J .125 MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ T STG JC 4.5 A 36 V 18 V 4.0 V 80 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 2.2 OC/W O O O DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM inches / mm G HI MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 ORDER CODE: ASI10592 CHARACTERISTICS SYMBOL BV CBO BV CES BV CEO BV EBO ICES hFE Cob GPE IMD3 IC = 50 mA IC = 50 mA IC = 50 mA IE = 5 mA VCE = 15 V VCE = 5.0 V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 36 36 18 4.0 5 UNITS V V V V mA --pF IC = 1.0 A f = 1.0 MHz ICQ = 25 mA f = 30 MHz 10 100 15 18 200 VCB = 12.5 V VCC = 12.5 V POUT = 10 W(PEP) ---30 dB dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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